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| BAV70W Datasheet, PDF (2/3 Pages) NXP Semiconductors – High-speed double diode | |||
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BL Galaxy Electrical
Production specification
Dual surface mount switching diode
BAV70W
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)R
IR
VF
CD
trr
Test conditions
IR= 100μA
VR=70V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V f=1MHz
IF=IR=10mA
IR=1mA RL=100â¦
MIN MAX UNIT
70
V
2.5
μA
715
855
mV
1000
1250
1.5
pF
6
nS
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Document number: BL/SSSDF008
Rev.A
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