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BAS70W_14 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – Surface Mount Schottky Barrier Diode | |||
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Production specification
Surface Mount Schottky Barrier Diode BAS70W/-04/-05/-06
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)R
IR
VF
CD
trr
Test conditions
MIN MAX UNIT
IR= 10μA
70
V
VR=50V
IF=1.0mA
IF=15mA
VR=0V f=1MHz
100
nA
410
mV
1000
2
pF
IF=IR=10mA RL=100â¦
5
nS
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
F018
Rev.A
www.gmicroelec.com
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