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BAS70W_14 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – Surface Mount Schottky Barrier Diode
Production specification
Surface Mount Schottky Barrier Diode BAS70W/-04/-05/-06
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)R
IR
VF
CD
trr
Test conditions
MIN MAX UNIT
IR= 10μA
70
V
VR=50V
IF=1.0mA
IF=15mA
VR=0V f=1MHz
100
nA
410
mV
1000
2
pF
IF=IR=10mA RL=100Ω
5
nS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
F018
Rev.A
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