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| BAS516 Datasheet, PDF (2/4 Pages) NXP Semiconductors – High-speed diode | |||
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BL Galaxy Electrical
High Speed Switching Diode
Production specification
BAS516
Parameter
Symbol
Min. Max.
Unit
Forward voltage
VF
0.715
V
0.855
V
1
V
1.25
V
Reverse current
IR
30
nA
1
μA
Diode capacitance
Cd
1
pF
Reverse recovery time trr
4
ns
Conditions
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=75V
VR=0,f=1MHz
IF=10mA,IR=10mA,RL=1mA
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Document number: BL/SSSDD002
Rev.A
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