3JH61 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – FAST RECOVERY DIODE

RATINGS AND CHARACTERISTIC CURVES
3JH61
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC ANDtTrr EST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
3.0
2.5
2.0
Single Phase
Half Wave 60Hz
Resistivs or
1.5
Inductive Load
1.0
0
25
50 75
100 125
150
250
200
150
100
50
01
TJ=25
8.3ms Single Half
Sine-Wave
10
100
AMBIENT TEMPERATURE,
FIG.4--TYPICAL FORWARD CHARACTERISTIC
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8 1.0
TJ=25
Pulse Width=300µS
1.2 1.4 1.6 1.8 2.0
NUMBER OF CYCLES AT 60 Hz
FIG.5-- TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
TJ=25
4
f=1MHz
2
1
0.1 0.2 0.4
1 2 4 10 20 40 100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
Document Number 0261033
BLGALAXY ELECTRICAL
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
2.