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| 3CD14001_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – High Voltage Fast Switching PNP Power Transistor | |||
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Production specification
High Voltage Fast Switching PNP Power Transistor
3CD14001
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-400
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-400
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-7
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
VCB=-400V,IE=0
ICEO
VCE=-400V,IB=0
IEBO
VEB=-7V,IC=0
-100 μA
-200 μA
-100 μA
DC current gain
VCE=-20V,IC=-20mA
10
hFE
VCE=-10V,IC=-0.25A
5
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-10mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=-50mA, IB=-10mA
VCE=-20V, IC=-20mA,
fT
f=1MHz
8
40
-0.5 V
-1.2 V
MHz
Fall time
Storage time
tf
IC=50mA,IB1=IB2=5mA,
ts
VCC=45V
0.3 μS
1.5 μS
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
C197
Rev.A
www.gmicroelec.com
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