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| 2SD1898 Datasheet, PDF (2/4 Pages) Rohm – Power Transistor (80V, 1A) | |||
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Production specification
Power Transistor(80V,1A)
2SD1898
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
120
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
80
V
Emitter-base breakdown voltage
V(BR)EBO IE=50μA,IC=0
5
V
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
Range
P
82-180
VCB=100V,IE=0
VEB=4V,IC=0
VCE=3V,IC=0.5A
82
IC=500mA, IB= 20mA
VCE=10V, IC= -50mA,
f=100MHz
VCB=10V,IE=0,f=1MHz
Q
120-270
1
μA
1
μA
390
0.15 0.4 V
100
MHz
20
pF
R
180-390
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
E087
Rev.A
www.gmicroelec.com
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