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| 2SC4374 Datasheet, PDF (2/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR (NPN) | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
2SC4374
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=1mA,IE=0
80
V
Collector- emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
80
V
Emitter- base breakdown voltage
V(BR)EBO IE=1mA, IC=0
5
V
Collector cut-off current
ICBO
VCB=80V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 μA
DC current gain
Collector-emitter saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
hFE
VCE(sat)
VBE
fT
Cob
VCE=2V,IC=50mA
70
VCE=2V,IC=200mA
40
IC=200mA,IB=20mA
VCE=-2V,IC=5mA
VCE=10V, IC=10mA
0.55
VCB=-10V,IE=0,f=1MHz
240
0.4 V
0.8 V
120
MHz
14
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
EO
Y
120-240
EY
E121
Rev.A
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