2SC4272 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – 27MHz CB Transceiver Driver Applications

Production specification
NPN Epitaxial Planar Silicon Transistor
2SC4272
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=10uA,IE=0}
75
V
Collector-emitter breakdown voltage _{V(BR)CEO IC=1mA,IB=0}
45
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=10uA,I_C=0
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
I_CBO
V_CB=40V,I_E=0
I_EBO
V_EB=4V,I_C=0
h_FE
V_CE=5V,I_C=500mA
60
1.0 μA
1.0 μA
390
Collector-emitter saturation voltage _VCE(sat) I_C=0.5A, I_B=0.05A
0.2 0.6 V
Base-emitter saturation voltage
V_BE(sat)
I_C=0.5A, I_B=0.05A
0.9 1.2 V
Transition frequency
f_T
V_CE=10V,I_c=50mA
180 250
MHz
Collector output capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
15
pF
CLASSIFICATION OF h_FE
Rank
Range
60-120
D
100-200
E
160-390
F
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E054
Rev.A
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