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| 2SC4226 Datasheet, PDF (2/4 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
2SC4226
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Feed back capacitance
Transition frequency
Noise Figure
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
Cre
fT
NF
IC=100μA,IE=0
20
IC=1mA,IB=0
12
IE=100μA,IC=0
3
VCB=10V,IE=0
VEB=1V,IC=0
VCE=3V,IC=7mA
40
VCE=3V,IE=0mA,f=1MHz
VCE=3V, IE=7mA
3.0
VCE=3V,IC=7mA,f=1GHz
V
V
V
1.0 μA
1.0 μA
110 250
0.7 1.5 pF
4.5
GHz
1.2 2.5 dB
CLASSIFICANTION OF hFE
Marking
R23
R24
R25
hFE
40-80
70-140
125-250
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
F042
Rev.A
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