 English |
|
|
|
|
|
|
|
| 2SC4215W Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor | |||
| |||
| ◁ |
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-base time constant
Transition frequency
Symbol
V(BR)CBO
Test conditions
IC=100μA,IE=0
V(BR)CEO
IC=1mA,IB=0
V(BR)EBO
ICBO
IEBO
hFE
CC.rbbâ
fT
IE=100μA,IC=0
VCB=4V,IE=0
VEB=4V,IC=0
VCE=6V,IC=1mA
VCE=6V,IC=1mA
VCE=6V, IE= 1mA
Production specification
2SC4215W
MIN TYP MAX UNIT
40
V
30
V
4
V
0.1 μA
0.5 μA
40
200
25 ps
260 550
MHz
CLASSIFICANTION OF hFE
Marking
hFE
QR
90-180
QO
135-270
QY
200-400
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Document number: BL/SSSTF041
Rev.A
www.galaxycn.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese