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| 2SC4215 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS) | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
2SC4215
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5 μA
DC current gain
hFE
VCE=6V,IC=1mA
40
200
Collector-base time constant
CC.rbbâ
VCE=6V,IC=1mA
25 ps
Transition frequency
fT
VCE=6V, IE= 1mA
260 550
MHz
CLASSIFICANTION OF hFE
Marking
hFE
QR
40-80
QO
70-140
QY
100-200
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
F041
Rev.A
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