2SC4180W Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – 3Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4180W
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol Test conditions
V_(BR)CBO I_C=100μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
MIN _{TYP MAX UNIT}
120
V
120
V
Emitter-base breakdown voltage _{V(BR)EBO IE=100μA,IC=0}
5
V
Collector cut-off current
I_CBO
V_CB=120V,I_E=0
0.05 μA
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
0.05 μA
DC current gain
h_FE
Collector-emitter saturation
voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
CLASSIFICATION OF h_FE
V_CE=6V,I_C=1mA
V_CE=6V,I_C=1mA
I_C=10mA,I_B=1mA
V_CE=6V, I_E=1mA
V_CB=30V,I_E=0,f=1MHz
135
900
100
0.3 V
250
MHz
2.5 pF
Range
135-270
200-400
300-600
450-900
Marking
D15
D16
D17
D18
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
Min
Max
A
1.8
2.2
B
1.15
1.35
C
1.0Typical
D
0.15
0.35
E
0.25
0.40
G
1.2
1.4
H
0.02
0.1
J
0.1Typical
K
2.1
2.3
All Dimensions in mm
Document number: BL/SSSTF040
Rev.A
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