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| 2SC4180 Datasheet, PDF (2/3 Pages) NEC – AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |||
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Production specification
Silicon Epitaxial Planar Transistor
2SC4180
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
120
V
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA,IB=0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
VCB=120V,IE=0
0.05 μA
VEB=5V,IC=0
VCE=6V,IC=1mA
135
VCE=6V,IC=1mA
100
IC=10mA,IB=1mA
0.05 μA
900
0.3 V
VCE=6V,IC=1mA
0.55
0.65 V
VCE=6V, IE=1mA
50
MHz
VCB=30V,IE=0,f=1MHz
2.5 pF
CLASSIFICATION OF hFE
Range
135-270
Marking
D15
200-400
D16
300-600
D17
450-900
D18
F040
Rev.A
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