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| 2SC4177W Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4177W
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol Test conditions
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=60V,IE=0
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1 μA
Emitter cut-off current
IEBO
DC current gain
Collector-emitter saturation
voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
hFE
VCE(sat)
VBE(sat)
fT
Cob
CLASSIFICATION OF hFE
VEB=5V,IC=0
VCE=6V,IC=1mA
IC=100mA,IB=10mA
IC=100mA,IB=10mA
VCE=6V, IE=-10mA
VCB=6V,IE=0,f=1MHz
0.1 μA
90 200 600
0.15 0.3 V
0.86 1.0
250
3.0
V
MHz
pF
Range
Marking
90-180
L4
135-270
L5
200-400
L6
300-600
L7
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Document number: BL/SSSTF039
Rev.A
www.galaxycn.com
2
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