 English |
|
|
|
|
|
|
|
| 2SC4177 Datasheet, PDF (2/4 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |||
| |||
| ◁ |
Production specification
Silicon Epitaxial Planar Transistor
2SC4177
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol Test conditions
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
MIN TYP MAX UNIT
60
V
50
V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 μA
DC current gain
Collector-emitter saturation
voltage
Base-emitter saturation voltage
hFE
VCE(sat)
VBE(sat)
VCE=6V,IC=1mA
IC=100mA,IB=10mA
IC=100mA,IB=10mA
90 200 600
0.15 0.3 V
0.86 1.0 V
Transition frequency
fT
VCE=6V, IE=-10mA
250
MHz
Collector output capacitance
Cob
VCB=6V,IE=0,f=1MHz
3.0
pF
CLASSIFICATION OF hFE
Range
90-180
135-270
200-400
300-600
Marking
L4
L5
L6
L7
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
F039
Rev.A
www.gmicroelec.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese