2SC4116W Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4116W
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=100μA,IE=0}
Collector-emitter breakdown
voltage
V_(BR)CEO I_C=1mA,I_B=0
Emitter-base breakdown voltage _{V(BR)EBO IE=100μA,IC=0}
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
60
V
50
V
5
V
0.1 μA
Emitter cut-off current
I_EBO
DC current gain
h_FE
Collector-emitter saturation
voltage
V_CE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
CLASSIFICATION OF h_FE
Rank
O
Range
Marking
70-140
LO
V_EB=5V,I_C=0
V_CE=6V,I_C=2mA
I_CE=100mA,I_B=10mA
V_CE=10V, I_C= 1mA
V_CB=10V,I_E=0,f=1MHz
0.1 μA
70
700
0.1 0.25 V
80
MHz
2.0 3.5 pF
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF038
Rev.A
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