2SC4116 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Production specification
Silicon Epitaxial Planar Transistor
2SC4116
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown
voltage
V_(BR)CBO I_C=100μA,I_E=0
60
V
Collector-emitter breakdown
voltage
V_(BR)CEO I_C=1mA,I_B=0
50
V
Emitter-base breakdown voltage _{V(BR)EBO IE=100μA,IC=0}
5
V
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
0.1 μA
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
0.1 μA
DC current gain
Collector-emitter saturation
voltage
Transition frequency
h_FE
V_CE=6V,I_C=2mA
V_CE(sat)
I_CE=100mA,I_B=10mA
f_T
V_CE=10V, I_C= 1mA
70
700
0.1 0.25 V
80
MHz
Collector output capacitance
C_ob
CLASSIFICATION OF h_FE
Rank
O
Range
70-140
Marking
LO
V_CB=10V,I_E=0,f=1MHz
Y
120-240
LY
GR
200-400
LG
2.0 3.5 pF
BL
350-700
LL
F038
Rev.A
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