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| 2SC4115 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Low Frequency Transistor | |||
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Production specification
NPN Epitaxial Planar Silicon Transistor
2SC4115
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
IC=50uA,IE=0
IC=1mA,IB=0
IE=50uA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=2V,IC=0.1A
IC=2A, IB=0.1A
VCE=2V,Ic=0.5A
F=100MHZ
40
V
20
V
6
V
0.1 μA
0.1 μA
120
560
0.5 V
200 290
MHz
CLASSIFICATION OF hFE
Range
120-270
Rank
Q
180-390
R
270-560
S
E105
Rev.A
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