2SC4102W Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4102W
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=50μA,IE=0}
Collector-emitter breakdown
voltage
V_(BR)CEO I_C=1mA,I_B=0
Emitter-base breakdown voltage _{V(BR)EBO IE=50μA,IC=0}
Collector cut-off current
I_CBO
V_CB=100V,I_E=0
120
V
120
V
5
V
0.5 μA
Emitter cut-off current
I_EBO
V_EB=4V,I_C=0
0.5 μA
DC current gain
h_FE
Collector-emitter saturation
voltage
V_CE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
CLASSIFICATION OF h_FE
Rank
Range
Marking
V_CE=6V,I_C=2mA
180
560
I_CE=10mA,I_B=1mA
V_CE=12V, I_C= 2mA,f=100MHz
V_CB=12V,I_E=0,f=1MHz
0.5
140
2.5
R
180-390
TR
S
270-560
TS
V
MHz
pF
Document number: BL/SSSTF037
Rev.A
www.galaxycn.com
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