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| 2SC4102 Datasheet, PDF (2/3 Pages) Rohm – High-voltage Amplifier Transistor(120V, 50mA) | |||
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Production specification
Silicon Epitaxial Planar Transistor
2SC4102
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
120
V
120
V
Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=100V,IE=0
0.5 μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5 μA
DC current gain
Collector-emitter saturation
voltage
Transition frequency
hFE
VCE=6V,IC=2mA
120
560
VCE(sat)
ICE=10mA,IB=1mA
0.5 V
fT
VCE=12V, IC= 2mA,f=100MHz
140
MHz
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Range
120-270
Marking
TP
VCB=12V,IE=0,f=1MHz
R
180-390
TR
2.5
pF
S
270-560
TS
F037
Rev.A
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