2SC4081W Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4081W
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=50μA,IE=0}
60
V
Collector-emitter breakdown voltage _{V(BR)CEO IC=1mA,IB=0}
50
V
Emitter-base breakdown voltage
Collector cut-off current
V_(BR)EBO I_E=50μA,I_C=0
I_CBO
V_CB=60V,I_E=0
6
V
0.1 μA
Emitter cut-off current
I_EBO
DC current gain
h_FE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
CLASSIFICATION OF h_FE
Rank
Q
Range
Marking
120-270
BQ
V_EB=6V,I_C=0
0.1 μA
V_CE=6V,I_C=1mA
120
560
I_CE=50mA,I_B=5mA
V_CE=12V, I_C= 2mA,f=30MHz
V_CB=12V,I_E=0,f=1MHz
0.4
180
3.5
V
GHz
pF
R
180-390
BR
S
270-560
BS
Document number: BL/SSSTF002
Rev.A
www.galaxycn.com
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