2SC4081 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – General Purpose Transistor

Production specification
Silicon Epitaxial Planar Transistor
2SC4081
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=50μA,IE=0}
60
V
Collector-emitter breakdown
voltage
V_(BR)CEO I_C=1mA,I_B=0
50
V
Emitter-base breakdown voltage _{V(BR)EBO IE=50μA,IC=0}
6
V
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
0.1 μA
Emitter cut-off current
I_EBO
V_EB=6V,I_C=0
0.1 μA
DC current gain
Collector-emitter saturation
voltage
Transition frequency
h_FE
V_CE=6V,I_C=1mA
V_CE(sat)
f_T
I_CE=50mA,I_B=5mA
V_CE=12V, I_C=
2mA,f=30MHz
Collector output capacitance
C_ob
V_CB=12V,I_E=0,f=1MHz
CLASSIFICATION OF h_FE
Rank
Q
R
Range
120-270
180-390
Marking
BQ
BR
120
560
0.4 V
180
MHz
3.5 pF
S
270-560
BS
F002
Rev.A
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