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| 2SC3930W Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor | |||
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC3930W
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
30
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=100μA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=10V,IE=0
0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Transition frequency
fT
Common emitter reverse transfer
capacitance
Cre
VEB=5V,IC=0
VCE=10V,IC=1mA
VCE=10V, IE= 1mA
f=200MHz
VCE=10V, IE= 1mA
f=10.7MHz
0.1 μA
70
220
150
MHz
1.5
pF
Noise figure
NF
VCB=10V,IC=1mA,f=5MHz
4
dB
Reverse transfer impedance
Zrb
VCB=10V,IC=1mA,f=2MHz
50
â¦
CLASSIFICANTION OF hFE
Marking
VB
VC
hFE
70-140
110-220
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Document number: BL/SSSTF036
Rev.A
www.galaxycn.com
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