English
Language : 

2SC3930 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC3930
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
30
V
Collector-emitter breakdown
voltage
V(BR)CEO
IC=100μA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=10V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 μA
DC current gain
hFE
Transition frequency
fT
Common emitter reverse transfer
capacitance
Cre
VCE=10V,IC=1mA
VCE=10V, IE= 1mA
f=200MHz
VCE=10V, IE= 1mA
f=10.7MHz
70
220
150
MHz
1.5
pF
Noise figure
NF
VCB=10V,IC=1mA,f=5MHz
4
dB
Reverse transfer impedance
Zrb
VCB=10V,IC=1mA,f=2MHz
50
Ω
CLASSIFICANTION OF hFE
Marking
VB
VC
hFE
70-140
110-220
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
F036
Rev.A
www.gmicroelec.com
2