2SC2712 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
2SC2712
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=100μA,IE=0}
60
V
Collector-emitter breakdown
voltage
V_(BR)CEO I_C=0.1mA,I_B=0
50
V
Emitter-base breakdown voltage _{V(BR)EBO IE=100μA,IC=0}
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Output capacitance
Noise Figure
I_CBO
V_CB=60V,I_E=0
0.1 μA
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
NF
V_EB=5V,I_C=0
V_CE=6V,I_C=2mA
70
I_C=100mA, I_B=10mA
V_CE=10V, I_C= 1mA
80
V_CB=10V, I_E=0,f=1kHz
V_CE=6V,I_C=0.1mA,f=1kHz
0.1 μA
700
0.1 0.25 V
MHz
2.0 3.5 pF
1.0 10 dB
CLASSIFICATION OF h_FE(1)
Rank
O
Range
70-140
Marking
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
Document number: BL/SSSTC021
Rev.A
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