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| 2SA2018 Datasheet, PDF (2/4 Pages) Rohm – Low frequency transistor | |||
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Production specification
LOW FREQUENCY TRANSISTOR
2SA2018
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN. Typ. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)BEO
ICBO
IEBO
hFE
VCE(sat)
Cobo
fT
Collector-base breakown voltage
IC=-10μA,IE=0
Collector- emitter breakown voltage IC=-1mA,IB=0
Emitter-base breakown voltage
IE=-10μA,IC=0
Collector cut-off current
IE=0,VCB=-15V
Emitter cut-off current
IC=0,VEB=-6V
DC current gain
VCE=-2V,IC=-10mA
collector-emitter saturation voltage IC=-50mA,IB=-5mA
Output capacitance
transition frequency
IE=0,VCB=-10V,f=1MHz
IE=10A,VCE =-2V,
f=100MHz
-15
-12
-6
-100 nA
-100 nA
270
680
-100 -250 mV
6.5
pF
260
MHz
H028
Rev.A
www.gmicroelec.com
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