2SA1235A_08 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA1235A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=-100μA,IE=0}
-50
V
Collector-emitter breakdown voltage _{V(BR)CEO IC=-0.1mA,IB=0}
-50
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA,I_C=0
-6
V
Collector cut-off current
I_CBO
V_CB=-50V,I_E=0
-0.1 μA
Emitter cut-off current
I_EBO
V_EB=-6V,I_C=0
-0.1 μA
DC current gain
V_CE=-6V,I_C=-1mA
150
800
h_FE
V_CE=-6V,I_C=-0.1mA
90
Collector-emitter saturation voltage _VCE(sat) I_C=-100mA, I_B=-10mA
-0.3 V
Transition frequency
Collector output capacitance
Noise figure
f_T
V_CE=-6V, I_C=-10mA
C_ob
V_CB=-6V,I_E=0,f=1MHz
V_CE=-6V,I_E=0.3mA,
NF
f=100MHz,R_G=10kΩ
200
4
20
MHz
pF
dB
CLASSIFICATION OF h_FE(1)
Rank
E
F
G
Range
Marking
150-300
ME
250-500
MF
400-800
MG
Document number: BL/SSSTC094
Rev.A
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