2SA1179_0712 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA1179
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{TYP MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=-10μA,IE=0}
-55
V
Collector-emitter breakdown voltage _{V(BR)CEO IC=-1mA,IB=0}
-50
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10μA,I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=-35V,I_E=0
-0.1 μA
Emitter cut-off current
I_EBO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
h_FE
V_CE(sat)
V_BE(sat)
f_T
V_EB=-4V,I_C=0
V_CE=-6V,I_C=-1mA
I_C=-50mA, I_B=-5mA
I_C=-50mA, I_B=-5mA
V_CE=-6V, I_C=-10mA
-0.1 μA
200
400
-0.5 V
-1.0 V
180
MHz
Collector output capacitance
C_ob
V_CB=-6V,I_E=0,f=1MHz
4
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC093
Rev.A
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