1N4933_15 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Fast Recovery Rectifier Diodes

RATINGS AND CHARACTERISTIC CURVES
1N4933 - - -1N4937
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
D.U.T.
(-)
(+)
50VDC
(APPROX)
(-)
1
N.1.
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES: 1. RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22PF
2. RISETIME=10ns MAX. SOURCEIMPEDANCE=50
-1.0A
SETTIMEBASE FOR 50/100ns /cm ^1cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
1.0
.8
.6
.4.
Single Phase
.2
Half Wave 60H Z
Resistive or
Inductive Load
0
25
50
75
100
125 150
175
AMBIENT TEMPERATURE,
FIG.4--PEAK FORWARD SURGE CURRENT
100
10
4
2
1.0
TJ=25
P ulse W idth=300 µS
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-- TYPICAL JUNCTION CAPACITANCE
50
40
30
20
10
0
12
8.3ms Single Half
Sine-Wave
4 6 8 10 20
40 60 80 100
10
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
NUMBER OF CYCLES AT 60 Hz
REVERSE VOLTAGE,VOLTS
Document Number 1561114
BLGALAXY ELECTRICAL
www.galaxycn.com
2.