1E1G Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – ULTRA FAST RECTIFIERS

RATINGS AND CHARACTERISTIC CURVES
1E1G --- 1E6G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
50VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(-)
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR 10 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
10
FIG.3 -- FORW ARD DERATING CURVE
z
1.0
1
0.1
0.01
.6
Tj=25^oC
Pulse Width=300 s
1% Duty Cycle
.8
1.0 1.2 1.4 1.6 1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
TJ = 25
f = 1.0MHz
Vsig = 50mVp-p
10
1
0 .1
1.0
4.0 10
10 0
REVERSE VOLTAGE,VOLTS
0.5
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(95mm)Lead Length
0
0 2 5 5 0 7 5 1 00 1 25 1 50 175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORW ARD SURGE CURRENT
30
25
8.3ms Single Half
Sine-Wave
20
15
10
5
0
0
1
5
20
50 100
NUMBER OF CYCLES AT 60Hz
Document Number 0264120
BLGALAXY ELECTRICAL
www.galaxycn.com
2.