TVR1B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type

BL ^{GALAXY ELECTRICAL}
HIGH EFFICIENCY RECT IFIER
TVR1B --- TVR1J
VOLTAGE RANGE: 100--- 600 V
CURRENT: 0.5 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with freon, alcohol, ls opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e: JEDEC DO-41, m olded plas tic
Term inals : Axial leads ,s olderable per
MIL-STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces , 0.34gram s
Mounting: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
TVR1B
Maximum peak repetitive reverse voltage
V_RRM
100
Maximum RMS voltage
V _{R MS}
70
Maximum DC blocking voltage
V_DC
100
Maximum average f orw ard rectif ied current
9.5mm lead length,
Peak f orw ard surge current
@T_A=75
I_{F (AV)}
10ms single half -sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 0.5 A
I_{F SM}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_{θ J A}
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A , I_R=1A, I_rr=0.25A
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance f rom junction to am bient.
TVR1D
200
140
200
TVR1G
400
280
400
0.5
10.0
1.2
10.0
50.0
100
20
60
- 55 ----- + 150
- 55 ----- + 150
TVR1J
600
420
600
UNITS
V
V
V
A
A
V
A
ns
15
pF
/W
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Document Number 0262049
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