TB2S_15 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Production specification
SILICON BRIDGE RECTIFIERS
TB2S--TB10S
FEATURES
z Glass passivated chip junction
z High surge overload rating: 30A peak
Pb
Lead-free
z Saves space on printed circuit boards
z This series is UL recognized under Component Index, file number E239431
z Plastic material has U/L flammability classification94V-O
z High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
z Case: Molded plastic body over passivated junctions
z Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
TB2S
TB4S
TB6S
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
Maximum average forward Output current T_L=100°C
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
V_RRM
200
400
600
V_RMS
140
280
420
V_DC
I_F(AV)
200
400
600
0.8¹⁾
1.0²⁾
I_FSM
30
Current squared time t < 8.3ms , Ta = 25
I²t
3.7
TB8S
800
560
800
TB10S
1000
700
1000
UNITS
V
V
V
A
A
A²s
Thermal Characteristics
Characteristic
Typical thermal resistance junction to lead
On aluminum substrate
Operating junction temperature range
Storage temperature range
Symbol
R _ΘJL
R _{θ JA}
T_J
T_STG
TB2S
TB4S
TB6S
TB8S
25
62.5
- 55 ---- + 150
- 55 ---- + 150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage at 0.4 A
Maximum reverse current @T_A=25
at rated DC blocking voltage
Symbol
V_F
I_R
TB2S
TB4S
TB6S
1.0
10
TB8S
TB10S UNITS
/W
TB10S UNITS
V
μA
Document Number:TBS701AA
www.gmicroelec.com
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