TB2S Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

BL^{GALAXY ELECTRICAL}
SILICON BRIDGE RECTIFIERS
FEATURES
. _{This series is UL recognized under Component Index,}
file number E239431
. _{Glass passivated chip junction}
. _{Plastic materrial has U/L flammability classification 94v-O}
. _{High surge overload rating: 30A peak}
. _{Save space on printed circuit boards}
. _{High temperature soldering guaranteed:}
260°C/10 seconds at 5 lbs. (2.3 kg) tension
MECHANICAL DATA
. _{Case: Molded plastic body over passivated junctions}
. _{Terminals: Plated leads solderable per MIL-STD-750,}
Method 2026
. _{Polarity: Polarity symbols marked on body}
Dimensions in inches and (millimeters)
. _{Mounting Position: Any}
. _Weight:
TB2S---TB10S
Reverse Voltage: 200 - 1000V
Forward Current: 0.8,1.0A
TBS
5.0± 0.15
BL
0.65± 0.05
4.0± 0.1
4.4± 0.15
6.5± 0.2
0.6± 0.1
0.25± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate by 20%.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output current
TL=100°C
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
Maximum instantaneous
forward voltage at 0.4A
Maximum reverse current @TA=25°C
at rated DC blocking voltage
Typical thermal resistance junction to lead
On aluminum substrate
On glass-epoxy substrate
Operating junction temperature range
Storage temperature range
NOTES: 1). On glass epoxy P.C.B.
2). On aluminum substrate
Symbol TB2S
VRRM
VRWS
VDC
IF(AV)
200
140
200
IFSM
VF
IR
RθJL
RθJA
TJ
TSTG
TB4S
400
280
400
TB6S
600
420
600
0.8¹⁾
1.0²⁾
30
TB8S
800
560
800
TB10S _UNITS
1000
V
700
V
1000
V
A
A
0.95
10
25
62.5
80
-55---+150
-55---+150
V
μA
°C/W
°C
°C
www.galaxycn.com
Document Number 0287187
BLGALAXY ELECTRICAL
1.