STD123 Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Pb
z Low saturation medium current application
Lead-free
z Extremely low collector saturation voltage
z Suitable for low voltage large current drivers
z High DC current gain and large current capability
z Low on resistance : RON=0.6Ω(Max.) (IB=1mA）
STD123
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor
z Audio frequency general purpose amplifier.
ORDERING INFORMATION
Type No.
Marking
STD123
123
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
20
V_CEO
Collector-Emitter Voltage
15
V_EBO
Emitter-Base Voltage
6.5
I_C
Collector Current -Continuous
1
P_C
Collector Dissipation
350
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
A
mW
℃
Document number: BL/SSSTC088
Rev.A
www.galaxycn.com
1