SS8050W Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(I_C= 1.5A）
z Complementary To SS8550W.
Pb
Lead-free
z Collector dissipation:P_C=200mW(T_C=25℃)
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
SS8050W
Y1
Production specification
SS8050W
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Ratings
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
25
V_EBO
Emitter-Base Voltage
6
I_C
Collector Current -Continuous
1.5
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
A
mW
℃
Document number: BL/SSSTF061
Rev.A
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