SS3150B Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Production specification
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
SS3150B--SS3200B
FEATURES
z Metal-Semiconductor junction with guard ring
z Epitaxial construction
z Low forward voltage drop, low switching losses
z High surge capacity
z For use in low voltage, high frequency inverters free
Pb
Lead-free
wheeling, and polarity protection applications
MECHANICAL DATA
z Case: SMB molded plastic body
z Terminals: Axial lead ,solderable per MIL-STD750, Method 2026
z Polarity: As marked
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
SS3150B
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
current at T_L=110℃
Peak forward surge current
8.3ms single half-sine-wave
rectified
V_RRM
V_RWS
V_DC
I_F(AV)
I_FSM
SS3CB
150
105
150
3.0
100
Thermal Characteristics
SS3200B
SS3DB
200
140
200
Characteristic
Symbol
SS3150B
SS3200B
Maximum thermal resistance
Typical Junction Capacitance
Operating temperature range
Storage temperature range
R_θJA
C_J
T_J
T_STG
55
300
-55----+150
-55----+150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Maximum instantaneous forward voltage
V_F
at I_FM=3.0A
Maximum DC reverse current T_A=25℃
at rated DC blocking voltage T_A=100℃
I_R
SS3150B
SS3200B
0.95
0.1
10
UNITS
V
V
V
A
A
UNITS
℃/W
PF
℃
℃
UNITS
V
mA
Document Number: SMB408AA
www.gmicroelec.com
1