SS1150 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Production specification
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
SS1150-- SS1200
FEATURES
z Metal-Semiconductor junction with guard ring
z Epitaxial construction
z Low forward voltage drop, low switching losses
z High surge capacity
z For use in low voltage, high frequency inverters free
Pb
Lead-free
wheeling, and polarity protection applications
MECHANICAL DATA
z Case: SMA molded plastic body
z Terminals: Axial lead , solderable per MIL-STD750, Method 2026
z Polarity: As marked
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
SS1150
Device marking code
SS1150
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T_L=110℃
Peak forward surge current
8.3ms single half-sine-wave
V_RRM
V_RWS
V_DC
I_F(AV)
I_FSM
150
135
150
1.0
35
Thermal Characteristics
Characteristic
Typical thermal resistance (NOTE 1)
Typical junction capacitance (NOTE 2)
Operating temperature range
Storage temperature range
Symbol
R_ΘJA
R_ΘJL
C_J
T_J
T_STG
SS1150
88
28
90
-55 --- +150
-55 --- +150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
SS1150
Maximum instantaneous forward voltage
V_F
at I_FM=1.0A
0.95
Maximum DC reverse current
T_J=25 ℃
0.1
I_R
at rated DC blocking voltage
T_J=100℃
10
Note：1、P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
2、1.Measured at 1MHz and applied reverse voltage of 4.0V D.C
Document Number: SMA406AA
SS1200
SS1200
200
140
200
SS1200
SS1200
UNITS
V
V
V
A
A
UNITS
℃/W
pF
℃
℃
UNITS
V
mA
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