SODDB3 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT RECTIFIER

BL GALAXY ELECTRICAL
SURFACE MOUNT
RECTIFIER
FEATURES
The three layer,two terminal,axial lead,
hermetically sealed diacs are designed specifically
for triggering thyristors. They demonstrate low
breakover current at breakover voltage as
they withstand peak pulse current. The breakover
symmetry is within three volts.These diacs are
intended for use in thyrisitors phase control,
circuits for lamp dimming,universal motor speed
control,and heat control.
MECHANICAL DATA
Case:JEDEC SOD-123FL,molded plastic over
passivated chip
Weight: 0.006 ounces, 0.02 gram
SODDB3 SODDB4
V_BO: 28 -- 45 V
SOD-123FL
1.8 0.1
5
0.98 0.1
2.8 0.1
5
0.60 0.25
1.0 0.2
0.05 0.30
3.7 0.2
ABSOLUTE RATINGS
Parameters
Device marking code
Power dissipation on printed
circuit (L=10mm) T_A= 50
Repetitive peak on-state current
tp=20µs, f=120Hz
Operating junction temperature
Storage temperature
Pc
I_TRM
T_j
T_STG
ELECTRICAL CHARACTERISTICS
SODDB3
SODDB4
DB
DC
150
2.0
- 40 --- + 125
- 40 --- + 125
UNITS
mW
A
Parameters
Test Conditions
SODDB3 SODDB4 UNITS
Breakover voltage ^*
Min
28
V_BO
C=22nF^**
See FIG.1
Typ
32
Max
36
Breakover voltage symmetry
|+V_BO|-
|-V_BO|
C=22nF**
See FIG.1
Max
Dynamic breakover voltage *
∆I =(I_BO
|±∆V| I_F=10mA)
Min
See FIG.1
Output voltage *
V_O
See FIG.2
Min
Breakover current *
I_BO
C=22nF**
Max
Rise time^*
t_r
See FIG.3
Typ
Leakage current ^*
I_R
V_R=0.5V_BO
Max
NOTE: * Electrical characteristics applicable in both forward and reverse directions.
** Connected in parallel with the devices.
± 3.0
5.0
5.0
100
1.5
10
35
40
V
45
V
V
V
µA
µs
µA
www.galaxycn.com
Document Number 0280061
BLGALAXY ELECTRICAL
1.