SBLB2030CT Datasheet, PDF (1/3 Pages) General Semiconductor – SCHOTTKY RECTIFIER

Production specification
Schottky Barrier Rectifier
SBLB2030CT-SBLB20100CT
FEATURES
z Metal-Semicondutcor Junction With Guard Ring.
z Epitaxial Construction.
Pb
z
Lead-free
Low Forward Voltage Drop,Low Switching Losses.
z High Surge Capacity.
z For Use In Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
z The Plastic Material Carries U/L Recognition 94V-0.
TO-263
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
SBLB SBLB SBLB SBLB SBLB SBLB SBLB ^SBLB
2030 2035 2040 2045 2050 2060 2080 ²⁰¹⁰⁰ Unit
CT CT CT CT CT CT CT CT
V_RRM
Recurrent Peak Reverse
Voltage
30 35
40 45 50
60
80 _{100 V}
V_RMS
RMS Voltage
21 25
28 32 35
42
56 _{70 V}
V_DC
DC Blocking Voltage
30 35
40 45 50
60
80 _{100 V}
I_F(AV)
Average Forward Rectified
Current @T_A=100℃
20
A
Peak Forward SurgeCurrent
8.3ms
Single
Half
I_FSM
Sine-wave Superimosed on
250
A
Rated Load
Rθ_JC
Thermal Resistance(Note1)
1.5
℃/W
Operating Junction
T_j
Temperature Range
-55 to +125
℃
T_stg
StorageTemperature Range
-55 to +150
℃
Note:1.Thermal resistance junction to case.
O003
Rev.A
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