S9016 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(I_C= 25mA）
z Power dissipation.(P_C=200mW)
APPLICATIONS
Pb
Lead-free
z AM converter, FM/RM amplifier of low noise.
Production specification
S9016
ORDERING INFORMATION
Type No.
Marking
S9016
Y2
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
20
V_EBO
Emitter-Base Voltage
4
I_C
Collector Current -Continuous
25
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{MAX UNIT}
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA,I_E=0
30
V
Collector-emitter breakdown voltage _{V(BR)CEO IC=0.1mA,IB=B 0}
20
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA,I_C=0
4
V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
V_CB=30V,I_E=0
0.1 μA
V_EB=3V,I_C=0
0.1 μA
V_CE=5V,I_C=1mA
I_C=10mA, I_B=B 1mA
28 198
0.3 V
V_CE=5V, I_C= 1mA
400
MHz
V_CB=10V, I_E=0,f=1MHz
1.6 pF
Document number: BL/SSSTC127
Rev.A
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