S9013_14 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor
FEATURES
z High Collector Current.(I_C= 500mA).
z Complementary To S9012.
z Excellent H_FE Linearity.
z Power dissipation.(P_C=300mW).
Pb
Lead-free
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
S9013
J3
Production specification
S9013
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
25
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
500
P_C
Collector Dissipation
300
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
C082
Rev.A
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