S9011_13 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(I_C= 30mA）
z Power dissipation.(P_C=200mW)
APPLICATIONS
Pb
Lead-free
z AM converter, AM/FM if amplifier general purpose
transistor
Production specification
S9011
ORDERING INFORMATION
Type No.
Marking
S9011
1T
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
50
V_CEO
Collector-Emitter Voltage
30
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
30
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{MAX UNIT}
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
I_C=100μA,I_E=0
I_C=0.1mA,I_B=0
I_E=100μA,I_C=0
V_CB=50V,I_E=0
V_EB=5V,I_C=0
V_CE=5V,I_C=1mA
I_C=10mA, I_B= 1mA
V_CE=5V,I_C=1mA
V_CE=5V, I_C= 1mA
50
V
30
V
5
V
0.1 μA
0.1 μA
28 198
0.3 V
0.65 0.75 V
150
MHz
C126
Rev.A
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