S5820_13 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Production specification
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
S5820--S5822
FEATURES
z Metal-Semiconductor junction with guard ring
z Epitaxial construction
Pb
Lead-free
z Low forward voltage drop, low switching losses
z High surge capability
z For use in low voltage, high frequency inverters free
wheeling, and polarity protection applications
z The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
z Case: SMC molded plastic body
z Terminals: Solder able per MIL- STD-202,method 208
z Polarity: Color band denotes cathode
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
S5820
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_L=90℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @T_J=125℃
V_RRM
20
V_RWS
14
V_DC
20
I_F(AV)
I_FSM
Thermal Characteristics
Characteristic
Symbol
S5820
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
Operating temperature range
Storage temperature range
C_J
R _{θ JA}
T_J
T_STG
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Maximum instantaneous forward voltage @ 3.0A (Note1)
V_F
Maximum DC reverse current @T_A=25℃
I_R
at rated DC blocking voltage @T_A=100℃
NOTE: 1. Pulse test : 300 s pulse width,1% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to ambient
S5820
0.475
S5821
30
21
30
3.0
80.0
S5821
250
20
- 55 ---- + 125
- 55 ---- +150
S5821
0.50
2.0
20
S5822
40
28
40
S5822
S5822
0.525
UNITS
V
V
V
A
A
UNITS
pF
℃/W
℃
℃
UNITS
V
mA
Document Number: SMC402AA
www.gmicroelec.com
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