RU4M Datasheet, PDF (1/2 Pages) Sanken electric – Fast-Recovery Rectifier Diodes

BL ^{GALAXY ELECTRICAL}
HIGH EFFICIENCY RECT IFIER
RU4M(Z) --- RU4AM(Z)
VOLTAGE RANGE: 400 --- 600 V
CURRENT: 3.5 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with freon, alcohol, ls opropand and
s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e: JEDEC DO-27, m olded plas tic
Term inals : Axial leads ,s olderable per
MIL-STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces ,1.15 gram s
Mounting: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V _{R MS}
Maximum DC blocking voltage
V_DC
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T_A=75
I_{F (AV)}
Peak f orw ard surge current
10ms single half -sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 3.5A
I_{F SM}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time
(Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJL
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, Irr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to am bient.
RU4M
400
280
400
RU4AM
600
420
600
3.5
UNITS
V
V
V
A
70.0
A
1.3
V
10.0
A
300.0
100
ns
70
50
pF
8
̼ͤ
- 55 ----- + 150
- 55 ----- + 150
www.galaxycn.com
Document Number 0262047
BLGALAXY ELECTRICAL
1.