RU3YX Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

BL ^{GALAXY ELECTRICAL}
HIGH EFFICIENCY RECTIFIER
RU3YX(Z) --- RU3C(Z)
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 1.1 - 2.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
Easily cleaned with freon, alcohol, lsopropand and
similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case: JEDEC DO-15B, molded plastic
Terminals: Axial leads,solderable per
MIL-STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.024 ounces, 0.68 grams
Mounting: Any
DO - 15B
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU3YX RU3 RU3A RU3B RU3C UNITS
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V_RMS
Maximum DC blocking voltage
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
@T_A=75
I_F(AV)
10ms single half-sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_FSM
V_F
I_R
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJL
T_J
Storage temperature range
T_STG
NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to ambient.
100
400
600
800
70
280
420
560
100
400
600
800
2.0
1.5
1.1
50.0
0.95
300.0
50
50
20.0
1.5
10.0
400.0
100
30
12
- 55 ----- + 150
- 55 ----- + 150
1000
V
700
V
1000
V
1.5
A
A
2.5
V
A
ns
pF
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Document Number 0262045
BLGALAXY ELECTRICAL
1.