RU2M Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

BL^{GALAXY ELECTRICAL}
HIGH EFFICIENCY RECT IFIER
RU2M(Z) --- RU2AM(Z)
VOLTAGE RANGE: 400 --- 600 V
CURRENT: 1.1 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with freon, alcohol, ls opropand
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-15L, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces , 0.48 gram s
Mounting: Any
DO - 15L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
RU2M
RU2AM
UNITS
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V _{R MS}
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
Peak f orw ard surge current
@ T_A =75
V_DC
I_{F (AV)}
10ms single half -sine-w ave
I_{F SM}
superimposed on rated load
@ T_J =125
Maximum instantaneous f orw ard voltage
@ 1.1A
V_F
Maximum reverse current
@ T_A =25
I_R
at rated DC blocking voltage @T _A=100
Maximum reverse recovery time
(Note 1)
t_rr
Typical junction capacitance
(Note 2)
Typical thermal resistance
(Note 3)
Operating junction temperature range
C_J
R_{θ J L}
T_J
Storage temperature range
T_STG
N OTE: 1.Meas ured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH _Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance junction to am bient .
400
600
V
280
420
V
400
600
V
1.1
A
20.0
A
1.2
10.0
300.0
100
20
15
15
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
̼ͤ
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Document Number 0262040
BLGALAXY ELECTRICAL
1.