RB751S-30 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

BL Galaxy Electrical
Schottky Barrier Diode
FEATURES
z Low reverse current and low forward
voltage.
z High reliability.
z Small surface mounting type.
Pb
Lead-free
Production specification
RB751S-30
APPLICATIONS
z Low current rectification and high speed switching.
SOD-523
ORDERING INFORMATION
Type No.
Marking
RB751S-40
5
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
DC reverse voltage
V_R
30
V
Mean rectifying current
I_O
30
mA
Peak forward surge current _IFSM
200
mA
Junction temperature
T_j
125
℃
Storage temperature
T_stg
-40-125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min.
V_F
I_R
C_T
Typ.
2
Max.
0.37
0.5
Unit
V
μA
pF
Conditions
I_F=1mA
V_R=30V
V_R=1V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSKD011
Rev.A
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