RB715F_14 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

Schottky Barrier Diode
FEATURES
z Extra small power mold type.
z Low V_F.
z High reliability.
Pb
Lead-free
Production specification
RB715F
APPLICATIONS
z General purpose application.
ORDERING INFORMATION
Type No.
Marking
RB715F
3D
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
Diode reverse voltage
V_RM
40
V
V_R
40
V
Average forward current
I_F
30
mA
Forward Surge Current
t=1μS
I_FS
200
mA
Power Dissipation
Junction temperature
P_d
150
mW
T_j
125
℃
Storage temperature range
T_stg
-40 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
MAX UNIT
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
V_(BR)R
I_R
V_F
C_D
I_R= 100μA
V_R=10V
I_F=1mA
V_R=1V f=1MHz
40
V
1
μA
370
mV
2.0
pF
F027
Rev.A
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