RB706F-40_14 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low VF SMD Schottky Barrier Diode

Schottky Barrier Diode
FEATURES
z Small surface mounting type.
z Low V_F and low I_R.
z High reliability.
Pb
Lead-free
Production specification
RB706F-40
APPLICATIONS
z For general purpose applications.
ORDERING INFORMATION
Type No.
Marking
RB706F-40
3J
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V_RM
45
V
Diode reverse voltage
V_R
40
V
Average output Current
I_O
30
mA
Forward Surge Current (10ms)
I_FSM
200
mA
Power Dissipation
P_d
100
mW
Junction temperature
T_j
125
℃
Storage temperature range
T_stg
-55 to +125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse current
Forward voltage
Diode capacitance
Symbol
I_R
V_F
C_D
Test conditions
V_R=10V
I_F=1mA
V_R=1V, f=1MHz
MIN Typ.
2
MAX
1
0.37
UNIT
μA
V
pF
F026
Rev.A
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