RB461F_14 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

Schottky Barrier Diode
FEATURES
z Small total capacitance.
z Power dissipation.(P_D=150mW)
Pb
Lead-free
Production specification
RB461F
APPLICATIONS
z For general purpose applications.
ORDERING INFORMATION
Type No.
Marking
RB461F
3B
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Diode reverse voltage
V_R
20
V
Forward continuous Current
I_F
700
mA
Power Dissipation
P_d
150
mW
Junction temperature
T_j
150
℃
Storage temperature range
T_stg
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
Reverse breakdown voltage V_(BR)R
Reverse current
I_R
Forward voltage
V_F
I_R=1mA
V_R=20V
I_F=700mA
MIN Typ.
20
MAX
200
0.49
UNIT
V
μA
V
F025
Rev.A
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